An image sensor capable of detecting nano-ampere transient signals with strong background illumination

Conference · Sun Oct 01 00:00:00 EDT 1995

OSTI ID:150700

Chu, D D; Dixon, D A ^[1]; Thelen, Jr, D C ^[2]

---

1. Sandia National Labs., Albuquerque, NM (United States)
2. New Mexico Univ., Albuquerque, NM (United States). Microelectronics Research Center

A readout detector integrated circuit (IC) has been developed which is capable of detecting nano-ampere photo-current signals of interest in a high (micro-ampere) background illumination or DC noise level (SNR=92dB). The readout detector sensor IC processes transient signals of interest from a separate photodiode array chip. Low noise signal conditioning, filtering, and signal thresholding implement smart sensor detection of only ``active pixels.`` This detector circuit can also be used to perform signal conditioning for other sensor applications that require detection of very small signals in a high background noise environment.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 150700
• Report Number(s): SAND-95-2299C; CONF-960201-1; ON: DE96001611
• Resource Relation: Conference: IEEE international solid-state circuits conference, San Francisco, CA (United States), 8-10 Feb 1996; Other Information: PBD: [1995]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
INTEGRATED CIRCUITS
DESIGN
PHOTOCURRENTS
DETECTION
PHOTODIODES
SENSITIVITY