PERFORMANCE STUDIES OF CDZNTE DETECTOR BY USING A PULSE SHAPE ANALYSIS.

Conference · Sun Jul 31 00:00:00 EDT 2005

OSTI ID:15020050

BOLOTNIKOV, A

Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: DOE/NNSA
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 15020050
• Report Number(s): BNL-74873-2005-CP; R&D Project: 02766; YN0100000; TRN: US0504368
• Resource Relation: Conference: SPIE 50TH ANNUAL MEETING; SAN DIEGO, CA; 20050731 through 20050804
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
CDTE SEMICONDUCTOR DETECTORS
PULSE SHAPERS
CHARGE COLLECTION
PERFORMANCE
ELECTRICAL PROPERTIES
CADMIUM TELLURIDES
ZINC TELLURIDES