XPS and UPS Investigation of NH4OH-Exposed Cu(In,Ga)Se2 Thin Films
Photoelectron spectroscopy was used to determine the compositional and electronic changes occurring in Cu(In,Ga)Se2 thin films as a result of immersion in aqueous ammonia solution. We find that NH4OH-treated CIGS surfaces are preferentially etched of indium and gallium, resulting in the formation of a thin layer of a degenerate Cu-Se compound that we tentatively identify as Cu2Se. The work function of ammonia-treated samples is found to increase by 0.6 eV relative to as-grown CIGS thin films. The uniformity of chemical bath effects (etching & deposition) was found to be improved by the addition to the bath of a non-ionic surfactant. Initial device results show that the new surfactant-based chemical bath deposition (CBD) method may lead to better and thinner CdS buffer layers.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15016463
- Report Number(s):
- NREL/CP-520-37419; TRN: US200513%%458
- Resource Relation:
- Conference: Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005; Other Information: PBD: 1 Feb 2005
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of CdZnS Buffer Layers on the Performance of CuInGaSe2 and CuGaSe2 Solar Cells
FTIR, EPMA, Auger, and XPS analysis of impurity precipitates in CdS films
Related Subjects
36 MATERIALS SCIENCE
AMMONIA
BUFFERS
DEPOSITION
ETCHING
GALLIUM
INDIUM
PHOTOELECTRON SPECTROSCOPY
THIN FILMS
WORK FUNCTIONS
X-RAY PHOTOELECTRON SPECTROSCOPY
SOLAR ENERGY
PV
CHEMICAL BATH DEPOSITION (CBD)
THIN FILM
NON-IONIC SURFACTANT
BUFFER LAYERS
INDIUM AND GALLIUM
SOLAR ENERGY - PHOTOVOLTAICS