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Title: Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003

Abstract

This subcontract report describes hydrogenating Si samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples were provided through NREL. The experimental work, carried out at Penn State, involved the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study was ion implantation, and the intent to understand mechanisms of defect passivation and activation by hydrogen. NREL implemented a study of hydrogen passivation of impurities and defects in silicon solar cells. The work included theoretical and experimental components performed at different universities. The theoretical studies consisted of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition-metal impurities in silicon. Experimental studies involved measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State included introduction of hydrogen in a variety of PV Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks were the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes.more » Electrical characterization entailed I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy (DLTS).« less

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15011711
Report Number(s):
NREL/SR-520-37181
ACQ-9-29639-04; TRN: US0501391
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Dec 2004; Related Information: Work performed by Pennsylvania State University, University Park, Pennsylvania
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 08 HYDROGEN; 14 SOLAR ENERGY; 43 PARTICLE ACCELERATORS; DEFECTS; DIFFUSION; ELECTRON CYCLOTRON-RESONANCE; EVALUATION; HYDROGEN; IMPURITIES; ION IMPLANTATION; PASSIVATION; PLASMA; SILICON; SILICON SOLAR CELLS; SPECTROSCOPY; THERMAL DIFFUSION; TRANSIENTS; TRAPPING; PV; THIN FILM; MODULE; ELECTRON CYCLOTRON RESONANCE (ECR) PLASMA; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); CRYSTALLINE; SOLAR CELLS; SOLAR ENERGY - PHOTOVOLTAICS

Citation Formats

Ashok, S. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003. United States: N. p., 2004. Web. doi:10.2172/15011711.
Ashok, S. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003. United States. https://doi.org/10.2172/15011711
Ashok, S. 2004. "Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003". United States. https://doi.org/10.2172/15011711. https://www.osti.gov/servlets/purl/15011711.
@article{osti_15011711,
title = {Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003},
author = {Ashok, S},
abstractNote = {This subcontract report describes hydrogenating Si samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples were provided through NREL. The experimental work, carried out at Penn State, involved the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study was ion implantation, and the intent to understand mechanisms of defect passivation and activation by hydrogen. NREL implemented a study of hydrogen passivation of impurities and defects in silicon solar cells. The work included theoretical and experimental components performed at different universities. The theoretical studies consisted of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition-metal impurities in silicon. Experimental studies involved measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State included introduction of hydrogen in a variety of PV Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks were the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes. Electrical characterization entailed I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy (DLTS).},
doi = {10.2172/15011711},
url = {https://www.osti.gov/biblio/15011711}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 2004},
month = {Wed Dec 01 00:00:00 EST 2004}
}