Compressive and Tensile Stress in CdSe Semiconductor Quantum Dots

Meulenberg, R W; Jennings, T; Strouse, G F

doi:10.1103/PhysRevB.70.235311

Title: Compressive and Tensile Stress in CdSe Semiconductor Quantum Dots

Journal Article · Wed Jun 02 00:00:00 EDT 2004 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.70.235311· OSTI ID:15011574

Meulenberg, R W; Jennings, T; Strouse, G F

Compressive and tensile stress in colloidal CdSe quantum dots (QDs) is examined using resonance Raman spectroscopy. We find that the dispersion of the longitudinal optical phonon mode with size does not follow theoretical calculations based on phonon confinement models. To account for these deviations, the presence of compressive or tensile stress in the QDs was proposed. We find that CdSe QDs prepared via a single source precursor (SSP) method exhibit compressive stress, while CdSe QDs prepared via high temperature lyothermal methods exhibit tensile stress. Evidence is provided that the SSP CdSe QDs stress is directly related to a surface effect.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: W-7405-ENG-48

OSTI ID:: 15011574

Report Number(s):: UCRL-JRNL-204519; TRN: US200507%%557

Journal Information:: Physical Review B, Vol. 70

Country of Publication:: United States

Language:: English

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Title: Compressive and Tensile Stress in CdSe Semiconductor Quantum Dots

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