Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint
the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15009893
- Report Number(s):
- NREL/CP-520-36748; TRN: US200430%%1576
- Resource Relation:
- Conference: Prepared for the 14th Workshop on Crystalline Silicon Solar Cells and Modules, Winter Park, CO (US), 08/08/2004--08/11/2004; Other Information: PBD: 1 Aug 2004
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ABSORPTION
ATOMS
BONDING
CHEMICAL STATE
CONTAMINATION
DEFECTS
DISTRIBUTION
OXYGEN
RECOMBINATION
SILICON
SILICON SOLAR CELLS
IMPURITIES
CRYSTAL GROWTH
PASSIVATION
MICROELECTRONICS
SOLAR ENERGY
PV
PHOTOVOLTAICS
SOLAR CELLS
CRYSTALLINE SILICON
MATERIALS AND PROCESSES
MODULE
DEVICE PROCESS
DEFECT
SOLAR ENERGY - PHOTOVOLTAICS