skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Time-Domain Tools for the Investigation of Gain-Quenched Laser Logic

Conference ·

Integrated all-optical logic gates that exploit the optical gain quenching effect in laterally optically pumped semiconductor multi-section edge-emitting lasers (SMEELs) are described. An accurate 2D time-domain (TD) model was implemented to investigate the gates' gain, modulation depth, and speed. Gain Quenched Laser Logic (GQLL) offer the potential of integrating several processing functions on the same chip and has many applications for all-optical high-speed switching. Lasers with optical gain control capable of routing and logic functions have been demonstrated via the gain quenching effect. In an inverter gate the laser output power is quenched when an optical input signal laterally coupled to the laser (control region) is high. NOR and NAND gates are achievable by adding other arms. The basic configuration of a GQLL device is schematically depicted in Fig. 1 . The Boolean completeness of this technology, the recent achievement in high laser modulation bandwidths, and the possibility of integrating lasers and passive waveguide interconnects progress using standard microelectronics fabrication techniques, makes GQLL the basis for a high-speed photonic logic family.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
15007542
Report Number(s):
UCRL-JC-154843; TRN: US200419%%78
Resource Relation:
Conference: 2003 International Semiconductor Device Research Symposium, Washington, DC (US), 12/10/2003--12/12/2003; Other Information: PBD: 20 Aug 2003
Country of Publication:
United States
Language:
English