Novel EUV Mask Blank Defect Repair Developments

Hau-Riege, S; Barty, A; Mirkarimi, P

Title: Novel EUV Mask Blank Defect Repair Developments

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Abstract

The development of defect-free reticle blanks is an important challenge facing the commercialization of extreme ultraviolet lithography (EUVL). The basis of EUVL reticles are mask blanks consisting of a substrate and a reflective Mo/Si multilayer. Defects on the substrate or defects introduced during multilayer deposition can result in critical phase and amplitude defects. Amplitude- or phase-defect repair techniques are being developed with the goal to repair many of these defects. In this report, we discuss progress in two areas of defect repair: (1) We discuss the effect of the residual reflectance variation over the repair zone after amplitude-defect repair on the process window. This allows the determination of the maximum tolerable residual damage induced by amplitude defect repair. (2) We further performed a quantitative assessment of the yield improvement due to defect repair. We found that amplitude- and phase-defect repair have the potential to significantly improve mask blank yield. Our calculations further show that yield can be maximized by increasing the number of Mo/Si bilayers.

Authors:: Hau-Riege, S; Barty, A; Mirkarimi, P

Publication Date:: Mon Mar 31 00:00:00 EST 2003

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 15004555

Report Number(s):: UCRL-MA-153462
TRN: US201209%%243

DOE Contract Number:: W-7405-ENG-48

Resource Type:: Software Manual

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; AMPLITUDES; COMMERCIALIZATION; DEFECTS; DEPOSITION; REPAIR; SUBSTRATES

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                    Hau-Riege, S, Barty, A, and Mirkarimi, P. Novel EUV Mask Blank Defect Repair Developments.  United States: N. p., 2003. 
        Web.

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                    Hau-Riege, S, Barty, A, & Mirkarimi, P. Novel EUV Mask Blank Defect Repair Developments.  United States.

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                    Hau-Riege, S, Barty, A, and Mirkarimi, P. 2003.  
        "Novel EUV Mask Blank Defect Repair Developments".  United States.  https://www.osti.gov/servlets/purl/15004555.

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@article{osti_15004555,

  title        = {Novel EUV Mask Blank Defect Repair Developments},

  author       = {Hau-Riege, S and Barty, A and Mirkarimi, P},

  abstractNote = {The development of defect-free reticle blanks is an important challenge facing the commercialization of extreme ultraviolet lithography (EUVL). The basis of EUVL reticles are mask blanks consisting of a substrate and a reflective Mo/Si multilayer. Defects on the substrate or defects introduced during multilayer deposition can result in critical phase and amplitude defects. Amplitude- or phase-defect repair techniques are being developed with the goal to repair many of these defects. In this report, we discuss progress in two areas of defect repair: (1) We discuss the effect of the residual reflectance variation over the repair zone after amplitude-defect repair on the process window. This allows the determination of the maximum tolerable residual damage induced by amplitude defect repair. (2) We further performed a quantitative assessment of the yield improvement due to defect repair. We found that amplitude- and phase-defect repair have the potential to significantly improve mask blank yield. Our calculations further show that yield can be maximized by increasing the number of Mo/Si bilayers.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/15004555},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Mar 31 00:00:00 EST 2003},

  month        = {Mon Mar 31 00:00:00 EST 2003}

}

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