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Title: Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001

Abstract

The objectives of this project were to obtain a fundamental understanding of wide-gap chalcopyrite semiconductors and photovoltaic devices. Information to be gathered included significant new fundamental materials data necessary for accurate modeling of single- and tandem-junction devices, basic materials science of wider-gap chalcopyrite semiconductors to be used in next-generation devices, and practical information on the operation of devices incorporating these materials. Deposition used a hybrid sputtering and evaporation method shown previously to produce high-quality epitaxial layers of Cu(In,Ga)Se2 (CIGS). Materials analysis was also provided to assist members of the National CIS Team, of which, through this contract, we were a member. Solar cells produced from resulting single-crystal epitaxial layers in collaboration with various members of the CIS Team were used to determine the factors limiting performance of the devices based on analysis of the results. Because epitaxial growth allows us to determine the surface orientation of our films specifically by choice of the substrate surface on which the film is grown, a major focus of the project concerned the nature of (110)-oriented CIGS films and the performance of solar cells produced from these films. We begin this summary with a description of the results for growth on (110) GaAs, whichmore » formed a basis for much of the work ultimately conducted under the program.« less

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
15004289
Report Number(s):
NREL/SR-520-34335
XAK-8-17619-34; TRN: US201015%%474
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Related Information: Work performed by University of Illinois, Urbana, Illinois
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING; CHALCOPYRITE; DEPOSITION; EVAPORATION; ORIENTATION; PERFORMANCE; SIMULATION; SOLAR CELLS; SPUTTERING; SUBSTRATES; PV; MANUFACTURING; THIN FILM; CHALCOPYRITE SEMICONDUCTOR; HYBRID SPUTTERING; SCANNING ELECTRON MICROSCOPY; ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; BACKSCATTERING DIFFRACTION PATTERNS; WIDE GAP; Solar Energy - Photovoltaics

Citation Formats

Rockett, A. Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001. United States: N. p., 2003. Web. doi:10.2172/15004289.
Rockett, A. Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001. United States. https://doi.org/10.2172/15004289
Rockett, A. 2003. "Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001". United States. https://doi.org/10.2172/15004289. https://www.osti.gov/servlets/purl/15004289.
@article{osti_15004289,
title = {Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001},
author = {Rockett, A},
abstractNote = {The objectives of this project were to obtain a fundamental understanding of wide-gap chalcopyrite semiconductors and photovoltaic devices. Information to be gathered included significant new fundamental materials data necessary for accurate modeling of single- and tandem-junction devices, basic materials science of wider-gap chalcopyrite semiconductors to be used in next-generation devices, and practical information on the operation of devices incorporating these materials. Deposition used a hybrid sputtering and evaporation method shown previously to produce high-quality epitaxial layers of Cu(In,Ga)Se2 (CIGS). Materials analysis was also provided to assist members of the National CIS Team, of which, through this contract, we were a member. Solar cells produced from resulting single-crystal epitaxial layers in collaboration with various members of the CIS Team were used to determine the factors limiting performance of the devices based on analysis of the results. Because epitaxial growth allows us to determine the surface orientation of our films specifically by choice of the substrate surface on which the film is grown, a major focus of the project concerned the nature of (110)-oriented CIGS films and the performance of solar cells produced from these films. We begin this summary with a description of the results for growth on (110) GaAs, which formed a basis for much of the work ultimately conducted under the program.},
doi = {10.2172/15004289},
url = {https://www.osti.gov/biblio/15004289}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 2003},
month = {Tue Jul 01 00:00:00 EDT 2003}
}