Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials; Preprint

Conference · Tue Apr 01 00:00:00 EST 2003

DOI:https://doi.org/10.1557/PROC-763-B2.6· OSTI ID:15004056

Johnston, S W; Crandall, R S

We present data showing the potential adverse effects on photovoltaic device performance of all traps in InGaAsN. Deep-level transient spectroscopy measurements were performed on InGaAsN samples grown by both metal-organic chemical vapor deposition and RF plasma-assisted molecular-beam epitaxy. For each growth technique, we studied samples with varying nitrogen composition ranging from 0% to 2.2%. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV is observed in all samples. These data clearly obey the Meyer-Neldel rule, which states that all traps have the same emission rate at the isokinetic temperature. A fit of our trap data gives an isokinetic temperature of 350 K, which means that both deep and shallow traps emit slowly at the operating temperature of solar cells-thus, the traps can be recombination centers.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 15004056
• Report Number(s): NREL/CP-520-33229; TRN: US201015%%292
• Resource Relation: Journal Volume: 763; Conference: Prepared for the 2003 Materials Research Society Spring Meeting, 21-25 April 2003, San Francisco, California
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ACTIVATION ENERGY
ALLOYS
CHEMICAL VAPOR DEPOSITION
EPITAXY
NITROGEN
PERFORMANCE
RECOMBINATION
SPECTROSCOPY
TRANSIENTS
PV
MEYER-NELDEL RULE
DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS)
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)
RF PLASMA-ASSISTED
MOLECULAR-BEAM EPITAXY (MBE)
INGAASN
ISOKINETIC TEMPERATURE
Solar Energy - Photovoltaics