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Title: Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics: Final Report, 17 July 1998--16 November 2001

Technical Report ·
DOI:https://doi.org/10.2172/15000849· OSTI ID:15000849

This report describes the new insights obtained into the growth of hydrogenated silicon (Si:H) films via real-time spectroscopic ellipsometry (RTSE) measurements. Evolutionary phase diagrams were expanded to include the effects of different deposition conditions, including rf power, pressure, and temperature. Detailed studies of degradation kinetics in thin films and corresponding solar cells have been carried out. Both p-i-n and n-i-p solar cells that incorporate Si:H i-layers deposited with and without H2-dilution have been studied. For the first time, direct and reliable correlations have been obtained between the light-induced changes in thin-film materials and the degradation of the corresponding solar cells.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
15000849
Report Number(s):
NREL/SR-520-32692; XAF-8-17619-22; TRN: US200401%%283
Resource Relation:
Other Information: PBD: 1 Aug 2002; Related Information: Work performed by The Pennsylvania State University, University Park, Pennsylvania
Country of Publication:
United States
Language:
English