Field emission from carbon films deposited by VHF CVD on difference substrates

Conference · Thu Apr 01 00:00:00 EST 1999

OSTI ID:14540

Abramov, A A; Andronov, A N; Felter, T E; Ioffe, A F; Kosarev, A I; Shotov, M V; Vinogradov, A J

As previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10{sup {minus}10} Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE Office of Defense Programs (DP) (US)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 14540
• Report Number(s): UCRL-JC-134674; YN0100000; YN0100000; TRN: AH200129%%309
• Resource Relation: Conference: Materials Research Society Spring '99 Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1 Apr 1999
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CARBON
CERAMICS
CONFIGURATION
FIELD EMISSION
SILICON
SUBSTRATES
WORK FUNCTIONS