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Title: InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor

Abstract

The authors have demonstrated a functional Pnp heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower bandgap energy (E{sub g} = 1.25eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction band offset, while the valence band offset remains comparable. This characteristic band alignment is very suitable for Pnp HBT applications. The device's peak current gain is 23 and it has a turn on voltage of 0.77V, which is 0.25V lower than in a comparable Pnp Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
14381
Report Number(s):
SAND99-2841J
TRN: AH200136%%484
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 3 Nov 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; HETEROJUNCTIONS; TRANSISTORS; VAPOR PHASE EPITAXY; INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM NITRIDES; GALLIUM NITRIDES; ALUMINIUM ARSENIDES; ELECTRICAL PROPERTIES

Citation Formats

BACA, ALBERT G, CHANG, PING-CHIH, HOU, H Q, LAROCHE, J R, LI, N Y, REN, F, and SHARPS, P R. InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor. United States: N. p., 1999. Web.
BACA, ALBERT G, CHANG, PING-CHIH, HOU, H Q, LAROCHE, J R, LI, N Y, REN, F, & SHARPS, P R. InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor. United States.
BACA, ALBERT G, CHANG, PING-CHIH, HOU, H Q, LAROCHE, J R, LI, N Y, REN, F, and SHARPS, P R. 1999. "InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor". United States. https://www.osti.gov/servlets/purl/14381.
@article{osti_14381,
title = {InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor},
author = {BACA, ALBERT G and CHANG, PING-CHIH and HOU, H Q and LAROCHE, J R and LI, N Y and REN, F and SHARPS, P R},
abstractNote = {The authors have demonstrated a functional Pnp heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower bandgap energy (E{sub g} = 1.25eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction band offset, while the valence band offset remains comparable. This characteristic band alignment is very suitable for Pnp HBT applications. The device's peak current gain is 23 and it has a turn on voltage of 0.77V, which is 0.25V lower than in a comparable Pnp Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT.},
doi = {},
url = {https://www.osti.gov/biblio/14381}, journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {Wed Nov 03 00:00:00 EST 1999},
month = {Wed Nov 03 00:00:00 EST 1999}
}