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Title: Electroless atomic layer deposition

Patent ·
OSTI ID:1406567
; ; ; ;

A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
National Technology & Engineering Solutions of Sandia, LLC
Patent Number(s):
9,803,285
Application Number:
14/189,866
OSTI ID:
1406567
Resource Relation:
Patent File Date: 2014 Feb 25
Country of Publication:
United States
Language:
English

References (6)

Hydrogen absorption induced metal deposition on palladium and palladium-alloy particles patent March 2009
Methods for forming palladium alloy thin films and optical hydrogen sensors employing palladium alloy thin films patent-application August 2005
Platinum Nanofilm Formation by EC-ALE via Redox Replacement of UPD Copper:  Studies Using in-Situ Scanning Tunneling Microscopy journal September 2006
Electroless Patterned Assembly of Metal Nanoparticles on Hydrogen-Terminated Silicon Surfaces for Applications in Photoelectrocatalysis journal December 2012
Electroless deposition of Pt at a Pd electrode by reaction with sorbed H in Pd/H journal July 2000
Atomic-Layer Electroless Deposition: A Scalable Approach to Surface-Modified Metal Powders journal April 2014

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36 MATERIALS SCIENCE