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Title: Bi-alkali antimonide photocathode growth: An X-ray diffraction study

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4959218· OSTI ID:1379526
 [1];  [2]; ORCiD logo [2];  [2];  [2];  [3];  [3];  [3];  [3];  [3]; ORCiD logo [3]; ORCiD logo [3];  [4];  [5]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
  5. Helmholtz-Zentrum Berlin (HZB), (Germany)

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-ray diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K 2 CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231; KC0407-ALSJNT-I0013; DMR-0936384; DMR-1332208; AC02-98CH10886
OSTI ID:
1379526
Alternate ID(s):
OSTI ID: 1267527
Journal Information:
Journal of Applied Physics, Vol. 120, Issue 3; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

References (15)

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journal March 1995
Record high-average current from a high-brightness photoinjector journal January 2013
Effect of nanoscale surface roughness on transverse energy spread from GaAs photocathodes journal February 2011
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Cathode R&D for future light sources
  • Dowell, D. H.; Bazarov, I.; Dunham, B.
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journal October 2010
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