Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3

Hassanpour, E.; Wegmayr, V.; Schaab, J.; Yan, Z.; Bourret, E.; Lottermoser, Th; Fiebig, M.; Meier, D.

doi:10.1088/1367-2630/18/4/043015

Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO ₃

Journal Article · Tue Apr 12 00:00:00 EDT 2016 · New Journal of Physics

DOI:https://doi.org/10.1088/1367-2630/18/4/043015· OSTI ID:1379262

Hassanpour, E. ^[1]; Wegmayr, V. ^[1]; Schaab, J. ^[1]; Yan, Z. ^[2]; Bourret, E. ^[2]; Lottermoser, Th ^[1]; Fiebig, M. ^[1]; Meier, D. ^[1]

ETH Zurich (Netherlands). Dept. of Materials
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division

We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO ₃ . Hole- and electron doping are achieved through the growth of Er _1-x Ca _x MnO ₃ and Er _1-x Zr _x MnO ₃ single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO ₃ without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for nonperturbative property-engineering of intrinsic domain states in this important class of multiferroics.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1379262

Journal Information:: New Journal of Physics, Vol. 18, Issue 4; ISSN 1367-2630

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy Schaab, J.; Shapovalov, K.; Schoenherr, P. Applied Physics Letters, Vol. 115, Issue 12 https://doi.org/10.1063/1.5117881	journal	September 2019
Oxygen vacancies in the bulk and at neutral domain walls in hexagonal ${YMnO}_{3}$ Skjærvø, Sandra H.; Småbråten, Didrik R.; Spaldin, Nicola A. Physical Review B, Vol. 98, Issue 18 https://doi.org/10.1103/physrevb.98.184102	journal	November 2018
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Electrical half-wave rectification at ferroelectric domain walls Schaab, J.; Skjærvø, S. H.; Krohns, S. arXiv https://doi.org/10.48550/arxiv.1803.08253	text	January 2018

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36 MATERIALS SCIENCE
multiferroics
domain engineering
piezoresponse force microscopy
second harmonic generation

Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3

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Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO ₃