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Title: Dry etch method for texturing silicon and device

Patent ·
OSTI ID:1372649
; ; ;

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation
Patent Number(s):
9,716,195
Application Number:
14/747,954
OSTI ID:
1372649
Resource Relation:
Patent File Date: 2015 Jun 23
Country of Publication:
United States
Language:
English

References (13)

Gaseous nonpreferential etching of silicon patent July 1972
Dry etching method patent November 1993
Dry etching method patent May 1994
Dry etching method using (SN).sub.x protective layer patent May 1994
Epitaxial growth of CZT(S,Se) on silicon patent March 2016
User Control Interface patent-application January 2009
Copper Layer Processing patent-application March 2010
Dry Etching Method patent-application May 2012
Method and Apparatus to Control Surface Texture Modification of Silicon Wafers for Photovoltaic Cell Devices patent-application March 2013
Polycrystalline-Type Solar Cell Panel and Process For Production Thereof patent-application April 2013
Plasma Etching Method patent-application February 2014
Hydrogen Sulfide as an Etchant for Silicon journal January 1969
Anisotropic Reactive Ion Etching of Silicon Using SF6/O2/CHF3 Gas Mixtures journal January 1995

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36 MATERIALS SCIENCE