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Title: Selective nanoscale growth of lattice mismatched materials

Patent ·
OSTI ID:1364428
;

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
909872
Assignee:
STC.UNM
Patent Number(s):
9,685,324
Application Number:
14/610,254
OSTI ID:
1364428
Resource Relation:
Patent File Date: 2015 Jan 30
Country of Publication:
United States
Language:
English

References (12)

Nitride-based semiconductor element and method of forming nitride-based semiconductor patent April 2004
Method for epitaxial growth patent July 2012
Enhanced light extraction in leds through the use of internal and external optical elements patent-application March 2004
Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture patent-application March 2005
High efficiency multi-active layer tunnel regenerated white light emitting diode patent-application March 2005
Group III-nitrides on Si substrates using a nanostructured interlayer patent-application May 2007
Wafer structure and epitaxial growth method for growing the same patent-application July 2009
Ultra-Low Dislocation Density Group III - Nitride Semiconductor Substrates Grown Via Nano- Or Micro-Particle Film patent-application December 2010
Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy journal September 2011
New approach to the high quality epitaxial growth of lattice‐mismatched materials journal July 1986
Strain-relieved, dislocation-free InxGa1−xAs∕GaAs(001) heterostructure by nanoscale-patterned growth journal November 2004
Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films journal January 1997

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