Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection

Li, Hao; Meng, Fang; Malliakas, Christos D.; Liu, Zhifu; Chung, Duck Young; Wessels, Bruce; Kanatzidis, Mercouri G.

doi:10.1021/acs.cgd.6b01118

Title: Mercury Chalcohalide Semiconductor Hg₃Se₂Br₂ for Hard Radiation Detection

Journal Article · Wed Sep 28 00:00:00 EDT 2016 · Crystal Growth and Design

DOI:https://doi.org/10.1021/acs.cgd.6b01118· OSTI ID:1352593

Li, Hao ^[1]; Meng, Fang ^[1]; Malliakas, Christos D. ^[2]; Liu, Zhifu ^[3]; Chung, Duck Young ^[1]; Wessels, Bruce ^[4]; Kanatzidis, Mercouri G. ^[2]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Department of Chemistry
Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering
Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering and Department of Electrical Engineering and Computer Science

We present Hg₃Se₂Br₂ that has a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm³) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å³. It melts congruently at a low temperature, 566°C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg₃Se₂Br₂ up to 1 cm long have been grown using the Bridgman method. Hg₃Se₂Br₂ single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg₃Se₂Br₂ measured by the two probe method is on the order of 10¹¹ Ω·cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ)_e ≈ 1.4 × 10^–4cm²/V and (μτ)_h ≈ 9.2 × 10^–5cm²/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. Lastly, on the basis of the photoconductivity and hard X-ray spectrum, Hg₃Se₂Br₂ is a promising candidate for X-ray and γ-ray radiation detection at room temperature.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE NA Office of Nonproliferation and Verification Research and Development (NA-22)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1352593

Journal Information:: Crystal Growth and Design, Vol. 16, Issue 11; ISSN 1528-7483

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
X-ray detector
chalcohalide
crystal growth
mobility-lifetime product
photoconductivity
γ-ray detector

Title: Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection

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Title: Mercury Chalcohalide Semiconductor Hg₃Se₂Br₂ for Hard Radiation Detection