Microdefects in nitrogen doped FZ silicon revealed by Li+ drifting
- and others
ULSI technology requires ultra-thin device oxides with excellent breakdown integrity. Recent studies have unveiled degraded dielectric breakdown voltage (DBV) performance of the ultra-thin oxides. These findings suggest that one source for poor oxide integrity is the incorporation of native defects from the Si substrate during oxide growth. Primary defect candidates are D defects which exist mostly in the central region of floating zone (FZ) grown Si crystals. Nitrogen (N) doping eliminates D defects, as detected by conventional means, and improves oxide integrity. Results are presented indicating the prevalence of microdefects in the central region of p-type nitrogen doped FZ Si using the method of Li ion (Li{sup +}) drifting in an electric field. A model has been developed based on Li interactions in Si which describes the Li{sup +} precipitation mechanism. The mechanism establishes that vacancies are the most likely Li{sup +} precipitation sites. The results are discussed in relation to breakdown mode patterns of polished FZ Si wafers after gate oxide tests.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 135145
- Report Number(s):
- LBL-37561; CONF-9507172-3; ON: DE96002559; TRN: 95:008590
- Resource Relation:
- Conference: 18. international conference on defects in semiconductors, Sendai (Japan), 23-28 Jul 1995; Other Information: PBD: Jul 1995
- Country of Publication:
- United States
- Language:
- English
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