U.S. Department of EnergyOffice of Scientific and Technical Information
MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
Abstract
Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.
- Authors:
-
- Rutgers Univ., Piscataway, NJ (United States). Dept. of Electrical and Computer Engineering
- Zhejiang Univ., Hangzhou (China). College of Electrical Engineering
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1349569
- Report Number(s):
- BNL-113698-2017-JA
Journal ID: ISSN 2045-2322; KC0403020
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; electrical and electronic engineering; electronic devices
Citation Formats
Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, and Lu, Yicheng. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. United States: N. p., 2016.
Web. doi:10.1038/srep34169.
Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, & Lu, Yicheng. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. United States. https://doi.org/10.1038/srep34169
Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, and Lu, Yicheng. 2016.
"MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics". United States. https://doi.org/10.1038/srep34169. https://www.osti.gov/servlets/purl/1349569.
@article{osti_1349569,
title = {MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics},
author = {Hong, Wen-Chiang and Ku, Chieh-Jen and Li, Rui and Abbaslou, Siamak and Reyes, Pavel and Wang, Szu-Ying and Li, Guangyuan and Lu, Ming and Sheng, Kuang and Lu, Yicheng},
abstractNote = {Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.},
doi = {10.1038/srep34169},
url = {https://www.osti.gov/biblio/1349569},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 6,
place = {United States},
year = {Mon Oct 10 00:00:00 EDT 2016},
month = {Mon Oct 10 00:00:00 EDT 2016}
}
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