Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

doi:10.1073/pnas.1508578112

Title: Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Proceedings of the National Academy of Sciences of the United States of America

DOI:https://doi.org/10.1073/pnas.1508578112· OSTI ID:1348923

Zhou, Nanjia ^[1]; Kim, Myung -Gil ^[1]; Loser, Stephen ^[1]; Smith, Jeremy ^[1]; Yoshida, Hiroyuki ^[2]; Guo, Xugang ^[1]; Song, Charles ^[1]; Jin, Hosub ^[1]; Chen, Zhihua ^[3]; Yoon, Seok Min ^[1]; Freeman, Arthur J. ^[1]; Chang, Robert P. H. ^[1]; Facchetti, Antonio ^[4]; Marks, Tobin J. ^[1]

Northwestern Univ., Evanston, IL (United States)
Chiba Univ., Chiba (Japan)
Polyera Corp., Skokie, IL (United States)
Northwestern Univ., Evanston, IL (United States); Polyera Corp., Skokie, IL (United States)

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

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Research Organization:: Northwestern Univ., Evanston, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Argonne-Northwestern Solar Energy Research Center (ANSER)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001059; FG02-08ER46536; 26288007; DMR-1121262; CHE-0923236

OSTI ID:: 1348923

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Vol. 112, Issue 26; ISSN 0027-8424

Publisher:: National Academy of SciencesCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 41 works

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36 MATERIALS SCIENCE
25 ENERGY STORAGE
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Title: Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

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