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Title: Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

Patent ·
OSTI ID:1348367
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A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Patent Number(s):
9,608,141
Application Number:
14/968,252
OSTI ID:
1348367
Resource Relation:
Patent File Date: 2015 Dec 14
Country of Publication:
United States
Language:
English

References (6)

Masking pastes and processes for manufacturing a partially transparent thin-film photovoltaic panel patent February 2014
Package structure and solar cell with the same patent September 2015
Semiconductor Materials and Its Application as an Absorber Material for Solar Cells patent-application June 2012
A Study of Increased Resistivity of FTO Back Contact for CZTS Based Absorber Material Grown by Electrodeposition-Annealing Route journal January 2011
Solution-phase Synthesis of Stannite-type Ag2ZnSnS4 Nanoparticles for Application to Photoelectrode Materials journal September 2012
CGS-Thin Films Solar Cells on Transparent Back Contact conference May 2006

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36 MATERIALS SCIENCE
14 SOLAR ENERGY