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Title: Microstructured silicon radiation detector

Patent ·
OSTI ID:1346947
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A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation
Patent Number(s):
9,595,628
Application Number:
14/456,934
OSTI ID:
1346947
Resource Relation:
Patent File Date: 2014 Aug 11
Country of Publication:
United States
Language:
English

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