Emergent geometric frustration of artificial magnetic skyrmion crystals

Ma, Fusheng; Reichhardt, Charles; Gan, Weiliang; Reichhardt, Cynthia Jane  Olson; Lew, Wen Siang

doi:10.1103/PhysRevB.94.144405

Title: Emergent geometric frustration of artificial magnetic skyrmion crystals

Journal Article · Wed Oct 05 00:00:00 EDT 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.94.144405· OSTI ID:1337093

Ma, Fusheng ^[1]; Reichhardt, Charles ^[2]; Gan, Weiliang ^[1]; Reichhardt, Cynthia Jane Olson ^[2]; Lew, Wen Siang ^[1]

Nanyang Technological Univ. (Singapore)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Magnetic skyrmions have been receiving growing attention as potential information storage and magnetic logic devices since an increasing number of materials have been identified that support skyrmion phases. Explorations of artificial frustrated systems have led to new insights into controlling and engineering new emergent frustration phenomena in frustrated and disordered systems. Here, we propose a skyrmion spin ice, giving a unifying framework for the study of geometric frustration of skyrmion crystals (SCs) in a nonfrustrated artificial geometrical lattice as a consequence of the structural confinement of skyrmions in magnetic potential wells. The emergent ice rules from the geometrically frustrated SCs highlight a novel phenomenon in this skyrmion system: emergent geometrical frustration. We demonstrate how SC topology transitions between a nonfrustrated periodic configuration and a frustrated icelike ordering can also be realized reversibly. The proposed artificial frustrated skyrmion systems can be annealed into different ice phases with an applied current-induced spin-transfer torque, including a long-range ordered ice rule obeying ground state, as-relaxed random state, biased state, and monopole state. In conclusion, the spin-torque reconfigurability of the artificial skyrmion ice states, difficult to achieve in other artificial spin ice systems, is compatible with standard spintronic device fabrication technology, which makes the semiconductor industrial integration straightforward.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1337093

Report Number(s):: LA-UR-15-29308

Journal Information:: Physical Review B, Vol. 94, Issue 14; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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