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Title: Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep24862· OSTI ID:1335601
 [1]; ORCiD logo [2];  [2];  [3]
  1. Univ. of Cambridge (United Kingdom). Dept. of Materials Science and Metallurgy; Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division
  3. Univ. of Cambridge (United Kingdom). Dept. of Materials Science and Metallurgy

A fundamental challenge in the design of LEDs is to maximise electro-luminescence efficiency at high current densities. We simulate GaN-based LED structures that delay the onset of efficiency droop by spreading carrier concentrations evenly across the active region. Statistical analysis and machine learning effectively guide the selection of the next LED structure to be examined based upon its expected efficiency as well as model uncertainty. This active learning strategy rapidly constructs a model that predicts Poisson-Schrödinger simulations of devices, and that simultaneously produces structures with higher simulated efficiencies.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Univ. of Cambridge (United Kingdom)
Sponsoring Organization:
USDOE Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
AC52-06NA25396; 20140013DR
OSTI ID:
1335601
Report Number(s):
LA-UR-15-27950
Journal Information:
Scientific Reports, Vol. 6; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 38 works
Citation information provided by
Web of Science

References (43)

Impact of active layer design on InGaN radiative recombination coefficient and LED performance journal March 2012
The Knowledge-Gradient Policy for Correlated Normal Beliefs journal November 2009
Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency journal April 2012
Accelerating materials property predictions using machine learning journal September 2013
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop journal April 2013
Curve Fitting and Optimal Design for Prediction journal September 1978
The LED's dark secret journal August 2009
Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents journal March 2015
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers journal September 2008
On the origin of IQE-‘droop’ in InGaN LEDs journal May 2009
Neural Networks in Materials Science. journal January 1999
Bayesian look ahead one-stage sampling allocations for selection of the best population journal September 1996
Microstructural origins of localization in InGaN quantum wells journal August 2010
Physics of Semiconductor Devices journal October 1990
Efficient band-structure calculations of strained quantum wells journal April 1991
Commentary: The Materials Project: A materials genome approach to accelerating materials innovation journal July 2013
Efficient Global Optimization of Expensive Black-Box Functions journal January 1998
Big Data of Materials Science: Critical Role of the Descriptor journal March 2015
Designing rules and probabilistic weighting for fast materials discovery in the Perovskite structure journal May 2014
Gaussian Processes for Machine Learning book January 2005
Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells journal May 2007
Design and Analysis of Computer Experiments journal November 1989
Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures journal August 2013
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm journal April 2003
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes journal February 2008
An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors journal December 1984
Information-Theoretic Regret Bounds for Gaussian Process Optimization in the Bandit Setting journal May 2012
Materials Prediction via Classification Learning journal August 2015
On resonant optical excitation and carrier escape in GaInN/GaN quantum wells journal February 2009
Physics of Semiconductor Devices book January 2007
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 journal December 2007
Finding Nature’s Missing Ternary Oxide Compounds Using Machine Learning and Density Functional Theory journal June 2010
Materials informatics journal October 2005
Extrapolation, Interpolation, and Smoothing of Stationary Time Series book August 1949
Materials informatics journal April 2009
Design and analysis of computer experiments conference September 1998
Materials Informatics journal April 2009
Design and analysis of computer experiments journal December 2010
Physics of Semiconductor Devices journal June 1970
Physics of Semiconductor Devices book January 2015
Materials informatics journal November 2012
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop text January 2013
Big Data of Materials Science - Critical Role of the Descriptor text January 2014

Cited By (7)

Active learning in materials science with emphasis on adaptive sampling using uncertainties for targeted design journal February 2019
Active-learning and materials design: the example of high glass transition temperature polymers journal June 2019
Recent advances and applications of machine learning in solid-state materials science journal August 2019
Multi-objective Optimization for Materials Discovery via Adaptive Design journal February 2018
Estimating Fault Friction from Seismic Signals in the Laboratory text January 2017
Near Infrared Quantum Cutting Luminescence of Er3+/Tm3+ Ion Pairs in a Telluride Glass journal May 2017
A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates journal April 2017