skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ordered nanoscale domains by infiltration of block copolymers

Patent ·
OSTI ID:1331332

A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic features with patterned nanostructures defined by the configuration of the microdomain.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
9,487,600
Application Number:
13/209,190
OSTI ID:
1331332
Resource Relation:
Patent File Date: 2011 Aug 12
Country of Publication:
United States
Language:
English

References (35)

Method of forming high aspect ratio apertures patent January 2007
Complementary replacement of material patent July 2008
Method for manufacturing porous structure and method for forming pattern patent-application October 2006
TRILAYER RESIST SCHEME FOR GATE ETCHING APPLICATIONS patent-application April 2009
Method of Controlling Orientation of Domains in Block Copolymer Films patent-application July 2009
Method for Forming a Block Copolymer Pattern patent-application August 2011
Ordered Nanoscale Domains by Infiltration of Block Copolymers patent-application February 2012
SEQUENTIAL INFILTRATION SYNTHESIS FOR ADVANCED LITHOGRAPHY patent-application September 2012
Hierarchical self-assembly of metal nanostructures on diblock copolymer scaffolds journal December 2001
Hollow Inorganic Nanospheres and Nanotubes with Tunable Wall Thicknesses by Atomic Layer Deposition on Self-Assembled Polymeric Templates journal January 2007
UHV transmission electron microscopy on the reconstructed surface of (111) gold: I. General features journal November 1981
PRIME process for deep UV and E-beam lithography journal April 1990
Application of Plasmask R  resist and the DESIRE process to lithography at 248 nm journal November 1990
Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems
  • Thackeray, James W.; Orsula, George W.; Bohland, John F.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 6, Article No. 1620 https://doi.org/10.1116/1.584502
journal November 1989
Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications journal April 2010
Study of the fundamental contributions to line edge roughness in a 193 nm, top surface imaging system
  • Somervell, Mark H.; Fryer, David S.; Osborn, Brian
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 5 https://doi.org/10.1116/1.1289547
journal January 2000
Integrated Silylation and Dry Development of Resist for sub-0.15.MU.m Top Surface Imaging Applications. journal January 1998
Reduction of line edge roughness in the top surface imaging process
  • Mori, Shigeyasu; Morisawa, Taku; Matsuzawa, Nobuyuki
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 6, Article No. 3739 https://doi.org/10.1116/1.590409
journal November 1998
Optical Characterization and Process Control of Top Surface Imaging journal January 1999
Study of bilayer silylation process for 193 nm lithography using chemically amplified resist
  • Satou, I.; Kuhara, K.; Endo, M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 6 https://doi.org/10.1116/1.591005
journal January 1999
High sensitive negative silylation process for 193nm lithography journal June 2000
A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates journal May 2011
Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers journal September 2010
Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis journal July 2011
Etch properties of resists modified by sequential infiltration synthesis
  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 6, Article No. 06FG01 https://doi.org/10.1116/1.3640758
journal November 2011
Two-Dimensional Liquid Phase and the px.sqroot.3 Phase of Alkanethiol Self-Assembled Monolayers on Au(111) journal October 1994
Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
  • Goldfarb, Dario L.; Mahorowala, Arpan P.; Gallatin, Gregg M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 2 https://doi.org/10.1116/1.1667513
journal January 2004
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
  • Oehrlein, Gottlieb S.; Phaneuf, Raymond J.; Graves, David B.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 1 https://doi.org/10.1116/1.3532949
journal January 2011
Mobility analysis of surface roughness scattering in FinFET devices journal August 2011
An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling journal June 2001
VDD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations journal September 2010
Statistical Modeling and Simulation of Threshold Variation Under Random Dopant Fluctuations and Line-Edge Roughness journal June 2011
Line edge roughness of sub-100 nm dense and isolated features: Experimental study
  • Ma, Yuansheng; Tsvid, G.; Cerrina, Franco
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6 https://doi.org/10.1116/1.1624254
journal January 2003
Study on line edge roughness for electron beam acceleration voltages from 50 to 5 kV
  • Rio, D.; Constancias, C.; Saied, M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6 https://doi.org/10.1116/1.3253650
journal January 2009
25 nm mechanically buttressed high aspect ratio zone plates: Fabrication and performance
  • Olynick, Deirdre L.; Harteneck, Bruce D.; Veklerov, Eugene
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 6 https://doi.org/10.1116/1.1815298
journal January 2004