Semiconductor ferroelectric compositions and their use in photovoltaic devices
Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.
- Research Organization:
- Univ. of Pennsylvania, Philadelphia, PA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-07ER46431
- Assignee:
- The Trustees Of The University Of Pennsylvania (Philadelphia, PA)
- Patent Number(s):
- 9,484,475
- Application Number:
- 13/649,154
- OSTI ID:
- 1330710
- Resource Relation:
- Patent File Date: 2012 Oct 11
- Country of Publication:
- United States
- Language:
- English
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