Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Swiss Center for Electronics and Microtechnology (CSEM), Neuchatel (Switzerland)
Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1329999
- Report Number(s):
- NREL/JA-5J00-65653
- Journal Information:
- IEEE Journal of Photovoltaics, Vol. 6, Issue 4; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Boosting the Efficiency of III-V/Si Tandem Solar Cells
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions