Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

Chen, Sung-Ping; Huang, Zhi-Quan; Crisostomo, Christian P.; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

doi:10.1038/srep31317

Title: Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

Journal Article · Wed Aug 10 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep31317· OSTI ID:1326664

Chen, Sung-Ping ^[1]; Huang, Zhi-Quan ^[1]; Crisostomo, Christian P. ^[1]; Hsu, Chia-Hsiu ^[1]; Chuang, Feng-Chuan ^[1]; Lin, Hsin ^[2]; Bansil, Arun ^[3]

National Sun Yat-Sen University, Kaohsiuing (Taiwan). Dept. of Physics
National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research Centre; National Univ. of Singapore (Singapore). Dept. of Physics
Northeastern Univ., Boston, MA (United States). Dept. of Physics

Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect.

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Research Organization:: Temple Univ., Philadelphia, PA (United States); Northeastern Univ., Boston, MA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Center for Theoretical Sciences and the Ministry of Science and Technology of Taiwan

Grant/Contract Number:: SC0012575; FG02-07ER46352; AC02-05CH11231; NRF-NRFF2013-03; MOST-104-2112-M-110-002-MY3; MOST-103-2112-M- 110-008-MY3

OSTI ID:: 1326664

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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