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Title: Oblique patterned etching of vertical silicon sidewalls

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4945681· OSTI ID:1326637
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
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A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1326637
Alternate ID(s):
OSTI ID: 1420599
Report Number(s):
SAND-2016-9244J; APPLAB; 647514
Journal Information:
Applied Physics Letters, Vol. 108, Issue 14; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Cited By (2)

Ripple formation on Si surfaces during plasma etching in Cl 2 journal May 2018
Oblique angled plasma etching for 3D silicon structures with wiggling geometries journal November 2019

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Related Subjects

36 MATERIALS SCIENCE
plasma etching
silicon
cell membranes
topography
dielectrics