skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Understanding Misfit Strain Releasing Mechanisms via Molecular Dynamics Simulations of CdTe Growth on {112} Zinc-Blende CdS.

Conference ·
DOI:https://doi.org/10.1063/1.4959609· OSTI ID:1326194

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1326194
Report Number(s):
SAND2015-7957C; 603855
Resource Relation:
Journal Volume: 120; Journal Issue: 4; Conference: Proposed for presentation at the MRS Conference held November 29 - December 4, 2015 in Boston, MA.
Country of Publication:
United States
Language:
English

References (24)

III–nitrides: Growth, characterization, and properties journal February 2000
Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP journal April 2010
Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy journal June 2011
Molecular Dynamics Simulations of CdTe / CdS Heteroepitaxy - Effect of Substrate Orientation journal April 2016
Catalyst-Assisted Solution−Liquid−Solid Synthesis of CdS/CdSe Nanorod Heterostructures journal January 2007
Electrochemical Fabrication of CdS Nanowire Arrays in Porous Anodic Aluminum Oxide Templates journal January 1996
Structural and optical investigations on CdS thin films grown by chemical bath technique journal February 2001
Colloidal nanocrystal heterostructures with linear and branched topology journal July 2004
Stillinger-Weber potential for the II-VI elements Zn-Cd-Hg-S-Se-Te journal August 2013
An atomistically validated continuum model for strain relaxation and misfit dislocation formation journal June 2016
High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method journal June 2012
Atomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects journal January 2000
A molecular dynamics study of nickel vapor deposition: Temperature, incident angle, and adatom energy effects journal April 1997
HREM studies of twins in Cd1−xZnxTe (x≈0.04) thin films grown by molecular beam epitaxy journal September 2009
Defects in epitaxial multilayers: I. Misfit dislocations journal December 1974
Mechanical properties of thin films journal November 1989
The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructures journal July 1990
Critical layer thicknesses for inclined dislocation stability in multilayer structures journal August 1992
Critical layer thickness for misfit dislocation stability in multilayer structures journal April 1990
Theoretical comparison of the stability characteristics of capped and uncapped GexSi1−x strained epilayers journal August 1992
The energetics of dislocation array stability in strained epitaxial layers journal June 1993
Calculation of critical-layer-thickness and strain relaxation in GexSi1−x strained layers with interacting 60 and 90° dislocations journal March 1993
A new study of critical layer thickness, stability and strain relaxation in pseudomorphic ge x si 1-x strained epilayers journal May 1992
Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems journal June 1997

Cited By (3)

Altering thermal transport by strained-layer epitaxy journal May 2018
Predictive modeling of misfit dislocation induced strain relaxation effect on self-rolling of strain-engineered nanomembranes journal September 2018
Vacancy-assisted core transformation and mobility modulation of a-type edge dislocations in wurtzite GaN journal September 2019