Isotropic plasma etching of Ge Si and SiN_x films

Journal Article · Wed Aug 31 00:00:00 EDT 2016 · Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

DOI:https://doi.org/10.1116/1.4961944· OSTI ID:1323884

Henry, Michael David ^[1]; Douglas, Erica Ann ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF₃ and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN_x are described with etch rate reductions achieved by adjusting plasma chemistry with O₂. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN_x etch rates while retarding Ge etching.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1323884
• Report Number(s): SAND-2016-4884J; 640682; TRN: US1700144
• Journal Information: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics, Vol. 34, Issue 5; ISSN 2166-2746
• Publisher: American Vacuum Society/AIP
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Germanium
Plasma etching
Silicon