Contact Resistance Degradation Caused By Plasma Charging of Silicon on Insulator During Contact Etch.
Conference
·
OSTI ID:1315019
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1315019
- Report Number(s):
- SAND2014-19515C; 541029
- Resource Relation:
- Conference: Proposed for presentation at the American Vacuum Society Symposium held November 10-14, 2014 in Baltimore, MD.
- Country of Publication:
- United States
- Language:
- English
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