Continued Development of Dual-Gated Bilayer Graphene Device Structures.

Conference · Fri Aug 01 00:00:00 EDT 2014

OSTI ID:1315011

Howell, Stephen W.; Howell, Stephen W.; Beechem, Iii, Thomas Edwin; Beechem, Iii, Thomas Edwin; Ohta, Taisuke; Ohta, Taisuke; Hattar, Khalid Mikhiel; Hattar, Khalid Mikhiel; Dickerson, Jeramy Ray; Dickerson, Jeramy Ray

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1315011
• Report Number(s): SAND2014-17029C; 536966
• Resource Relation: Conference: Proposed for presentation at the SPIE Nanoepitaxy: Materials and Devices VI held August 18-22, 2014 in San Diego, CA.
• Country of Publication: United States
• Language: English