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Title: Silicon PM Radiation Hardness

Technical Report ·
DOI:https://doi.org/10.2172/1306466· OSTI ID:1306466
 [1]
  1. Boston Univ., MA (United States)

Detailed measurements have been made of 9 mm2 SiPMs from Hamamatsu (MPPC) and Zecotek (MAPD) after room temperature annealing after exposure to fluences of 1012 to 1013 cm-2. The data was used to complete the final ADR report.

Research Organization:
Boston Univ., MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0001520
OSTI ID:
1306466
Report Number(s):
DOE-SC0001520; TRN: US1601815
Country of Publication:
United States
Language:
English