Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel
- Univ. of Minnesota, Minneapolis, MN (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
We present a device model for light-emitting, ambipolar, organic field-effect transistors based on the gradual channel approximation. The model results are in very good agreement with recent experimental data. Trapping of injected carriers in localized states in the channel region is shown to be an important mechanism that can strongly affect the transfer characteristics and the light emission of these devices.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1304691
- Report Number(s):
- LA-UR-07-2264
- Country of Publication:
- United States
- Language:
- English
Similar Records
Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method
A surface-emitting vacuum-deposited organic light emitting device
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
Journal Article
·
Mon Apr 28 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:1304691
+2 more
A surface-emitting vacuum-deposited organic light emitting device
Journal Article
·
Sun Jun 01 00:00:00 EDT 1997
· Applied Physics Letters
·
OSTI ID:1304691
+3 more
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
Journal Article
·
Mon Oct 06 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:1304691
+8 more