Method of treating lignocellulose materials to produce ruminant feed
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patent
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January 1979 |
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
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patent
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November 1992 |
Single crystal titanium nitride epitaxial on silicon
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patent
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April 1995 |
Method of growing gallium nitride on a spinel substrate
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patent
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April 1998 |
Group-III nitride based light emitter
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patent
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August 1998 |
Miniature self-pumped monolithically integrated solid state laser
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patent
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August 1998 |
Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
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patent
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August 2001 |
Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
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patent
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January 2002 |
Bipolar transistor, semiconductor light emitting device and semiconductor device
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patent
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December 2002 |
Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
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patent
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February 2003 |
Bipolar transistor, semiconductor light emitting device and semiconductor device
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patent
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August 2003 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor
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patent
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July 2004 |
Spinel substrate and heteroepitaxial growth of III-V materials thereon
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patent
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January 2005 |
High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
|
patent
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October 2005 |
Domain epitaxy for thin film growth
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patent
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October 2005 |
Nitride semiconductor light emitting element and optical device containing it
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patent
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March 2006 |
Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
|
patent
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October 2006 |
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
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patent
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October 2006 |
Group-III nitride semiconductor light-emitting device and production method thereof
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patent
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May 2007 |
Technique for the growth of planar semi-polar gallium nitride
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patent
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May 2007 |
Buffer structure for modifying a silicon substrate
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patent
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January 2008 |
Light emitting apparatus and method of manufacturing the same
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patent
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June 2008 |
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
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patent
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October 2009 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films
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patent
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October 2009 |
Method for producing multijunction solar cell
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patent
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November 2009 |
Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
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patent
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August 2013 |
Lattice matched semiconductor growth on crystalline metallic substrates
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patent
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November 2013 |
Lattice matched crystalline substrates for cubic nitride semiconductor growth
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patent
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February 2015 |
Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
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patent
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May 2015 |
Photonic biasing and integrated solar charging networks for integrated circuits
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patent-application
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January 2003 |
Zymomonas pentose-sugar fermenting strains and uses thereof
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patent-application
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August 2003 |
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
|
patent-application
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April 2004 |
High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
|
patent-application
|
August 2004 |
Multi-junction, monolithic solar cell with active silicon substrate
|
patent-application
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July 2006 |
[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
|
patent-application
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September 2008 |
Semiconductor-based, large-area, flexible, electronic devices on <100> oriented substrates
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patent-application
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October 2008 |
Light Emitting Device
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patent-application
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February 2009 |
Methods for Fabricating Thin Film III-V-Compound Solar Cell
|
patent-application
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February 2009 |
Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
|
patent-application
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March 2009 |
{100}<100> or 45 Degrees-Rotated {100}<100>, Semiconductor-Based, Large-Area, Flexible, Electronic Devices
|
patent-application
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March 2011 |
Growth of Coincident Site Lattice Matched Semiconductor Layers and Devices on Crystalline Substrates
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patent-application
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June 2011 |
Nanoparticle Superlattice Engineering with DNA
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journal
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October 2011 |
Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates
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journal
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August 2002 |
Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides
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journal
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November 1999 |
Strong Photoluminescence Emission from Polycrystalline GaN Grown on Metal Substrate by NH3 Source MBE
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journal
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December 2001 |
Thin film poly III–V space solar cells
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conference
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May 2008 |
Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges
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journal
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April 2006 |
Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry
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journal
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November 2001 |
Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
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journal
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June 1978 |
On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
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journal
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March 2000 |
Material considerations for terawatt level deployment of photovoltaics
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journal
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February 2008 |
Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates
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journal
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January 2008 |
Properties of epitaxial GaN on refractory metal substrates
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journal
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February 2007 |
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
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journal
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July 2007 |
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
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journal
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September 2008 |
Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
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journal
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January 1996 |
The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors
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journal
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August 2004 |
Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)
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journal
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October 2000 |
Epitaxial growth of AlN films on single-crystalline Ta substrates
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journal
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August 2007 |
Nucleation and growth of epitaxial ZrB2(0001) on Si(111)
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journal
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July 2004 |
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
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journal
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March 1993 |
Epitaxial growth of GaN on copper substrates
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journal
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June 2006 |
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
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journal
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October 1996 |
Properties of GaN epitaxial layer grown on (111) MgAl2O4 substrate
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journal
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February 1997 |
Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substrates
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journal
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October 2006 |
Epitaxial growth of single-crystalline AlN films on tungsten substrates
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journal
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December 2006 |
Suppression of domain formation in GaN layers grown on Ge(111)
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journal
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February 2009 |
Morphological and chemical considerations for the epitaxy of metals on semiconductors
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journal
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January 1984 |
Epitaxial relationships between Al, Ag and GaAs{001} surfaces
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journal
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January 1982 |
Growth and properties of GaN and AlN layers on silver substrates
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journal
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November 2005 |
Growth of InN films on spinel substrates by pulsed laser deposition
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journal
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October 2007 |
Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
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journal
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May 1998 |
Increasing cube texture in high purity aluminium foils for capacitors
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journal
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December 2005 |
Research challenges to ultra-efficient inorganic solid-state lighting
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journal
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December 2007 |
The growth of epitaxial aluminium on As containing compound semiconductors
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journal
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January 1999 |
Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures
- Sacks, R. N.; Qin, L.; Jazwiecki, M.
-
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 3
https://doi.org/10.1116/1.590742
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journal
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January 1999 |
General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)
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journal
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May 2002 |
Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE
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journal
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April 1990 |
GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
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journal
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February 2009 |
Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
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journal
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March 1997 |
MBE growth of GaN on MgO substrate
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journal
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April 2007 |
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
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journal
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December 2005 |
Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
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journal
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April 2003 |
Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates
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journal
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December 2000 |
Band parameters for nitrogen-containing semiconductors
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journal
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September 2003 |
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
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journal
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October 1998 |
Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates
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journal
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May 2001 |
Molecular-beam epitaxy and migration-enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates
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journal
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September 1992 |
Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions
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journal
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April 2007 |
Transmission electron microscope study on electrodeposited Gd2O3 and Gd2Zr2O7 buffer layers for YBa2Cu3O7−δ superconductors
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journal
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July 2008 |
Domain epitaxy: A unified paradigm for thin film growth
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journal
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January 2003 |
Low cost, single crystal-like substrates for practical, high efficiency solar cells
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conference
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January 1997 |
Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4
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journal
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January 2006 |
Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation
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journal
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March 2002 |
InGaN‐GaN based light‐emitting diodes over (111) spinel substrates
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journal
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July 1996 |
Lattice-matched HfN buffer layers for epitaxy of GaN on Si
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journal
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August 2002 |
Epitaxy and Molecular Organization on Solid Substrates
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journal
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February 2001 |
Epitaxial growth in large‐lattice‐mismatch systems
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journal
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January 1994 |
New frontiers in thin film growth and nanomaterials
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journal
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February 2005 |
High rate epitaxial lift-off of InGaP films from GaAs substrates
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journal
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April 2000 |
Diffusion reactions at Al–MgAl2O4 interfaces—and the effect of applied electric fields
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journal
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December 2006 |
High-precision assessment of interface lattice offset by quantitative HRTEM: DETERMINATION OF LATTICE OFFSET BY HRTEM
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journal
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April 1999 |
Atomistic and electronic structure of Al/MgAl 2 O 4 and Ag/MgAl 2 O 4 interfaces
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journal
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April 2001 |
Single‐crystal Al growth on Si(111) by low‐temperature molecular beam epitaxy
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journal
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April 1993 |
Characterization of single-crystalline Al films grown on Si(111)
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journal
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October 1996 |
Large-misfit heteroepitaxy of aluminum films by ICB deposition
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journal
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July 1991 |
Epitaxial Al Schottky contacts formed on (111) GaAs
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journal
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May 1990 |
Epitaxial growth of (011) Al on (100) Si by vapor deposition
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journal
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July 1992 |
Epitaxial growth of (001) Al on (111) Si by vapor deposition
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journal
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August 1992 |
Importance of steps in heteroepitaxy: The case of aluminum on silicon
|
journal
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December 1994 |
RHEED Studies of MBE-grown Aluminium Layers on {111}-Oriented Silicon Substrates
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journal
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January 1991 |
The Epitaxial Orientation of Al on Si
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journal
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January 1993 |
Lattice match: An application to heteroepitaxy
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journal
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January 1984 |
Modeling structural and chemical relaxation at the Al/Si epitaxial interface
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journal
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July 1991 |
Epitaxial growth of sputtered A1 films on Si(001) substrates
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journal
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September 1991 |
Atomic structure of the epitaxial Al–Si interface
|
journal
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June 1986 |
Direct observation of an incommensurate solid-solid interface
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journal
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May 1989 |
Epitaxial growth of Al on Si(001) by sputtering
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journal
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July 1991 |
Single‐crystal Al films grown by sputtering on (111)Si substrates
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journal
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May 1992 |
Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates
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journal
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June 2001 |
Universal bandgap bowing in group-III nitride alloys
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journal
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August 2003 |
Cross-sectional TEM observation of the epitaxial Al/Si(111) interface
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journal
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January 1992 |