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Title: Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

Abstract

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Inventors:
; ;
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1295657
Patent Number(s):
9,418,814
Application Number:
14/594,949
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357; SC0009572
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jan 12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Sumant, Anirudha V., Baryshev, Sergey V., and Antipov, Sergey P. Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond. United States: N. p., 2016. Web.
Sumant, Anirudha V., Baryshev, Sergey V., & Antipov, Sergey P. Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond. United States.
Sumant, Anirudha V., Baryshev, Sergey V., and Antipov, Sergey P. 2016. "Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond". United States. https://www.osti.gov/servlets/purl/1295657.
@article{osti_1295657,
title = {Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond},
author = {Sumant, Anirudha V. and Baryshev, Sergey V. and Antipov, Sergey P.},
abstractNote = {A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.},
doi = {},
url = {https://www.osti.gov/biblio/1295657}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 16 00:00:00 EDT 2016},
month = {Tue Aug 16 00:00:00 EDT 2016}
}

Works referenced in this record:

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  • Pérez Quintero, Kenneth J.; Antipov, Sergey; Sumant, Anirudha V.
  • Applied Physics Letters, Vol. 105, Issue 12, Article No. 123103
  • https://doi.org/10.1063/1.4896418

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