High voltage and high current density vertical GaN power diodes

Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

doi:10.1049/el.2016.1156

Title: High voltage and high current density vertical GaN power diodes

Journal Article · Fri Jan 01 00:00:00 EST 2016 · Electronics Letters

DOI:https://doi.org/10.1049/el.2016.1156· OSTI ID:1289617

Fischer, A. J. ^[1]; Dickerson, J. R. ^[1]; Armstrong, A. M. ^[1]; Moseley, M. W. ^[1]; Crawford, M. H. ^[1]; King, M. P. ^[1]; Allerman, A. A. ^[1]; Kaplar, R. J. ^[1]; van Heukelom, M. S. ^[1]; Wierer, J. J. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Lehigh Univ., Bethlehem, PA (United States)

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm². Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm². An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1289617

Report Number(s):: SAND-2016-7478J; 646341

Journal Information:: Electronics Letters, Vol. 52, Issue 13; ISSN 0013-5194

Publisher:: Institution of Engineering and Technology (IET)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 59 works

Citation information provided by
Web of Science

References (10)

An assessment of wide bandgap semiconductors for power devices Hudgins, J. L.; Simin, G. S.; Santi, E. IEEE Transactions on Power Electronics, Vol. 18, Issue 3 https://doi.org/10.1109/TPEL.2003.810840	journal	May 2003
3.7 kV Vertical GaN PN Diodes Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2294175	journal	February 2014
4-kV and 2.8-$\text{m}\Omega $ -cm ² Vertical GaN p-n Diodes With Low Leakage Currents Kizilyalli, I. C.; Prunty, T.; Aktas, O. IEEE Electron Device Letters, Vol. 36, Issue 10 https://doi.org/10.1109/LED.2015.2474817	journal	October 2015
400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Electron Device Letters, Vol. 35, Issue 6 https://doi.org/10.1109/LED.2014.2319214	journal	June 2014
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Qi, Meng; Nomoto, Kazuki; Zhu, Mingda Applied Physics Letters, Vol. 107, Issue 23 https://doi.org/10.1063/1.4936891	journal	December 2015
High Voltage Vertical GaN p-n Diodes With Avalanche Capability Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2266664	journal	October 2013
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Hu, Zongyang; Nomoto, Kazuki; Song, Bo Applied Physics Letters, Vol. 107, Issue 24 https://doi.org/10.1063/1.4937436	journal	December 2015
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV Ohta, Hiroshi; Kaneda, Naoki; Horikiri, Fumimasa IEEE Electron Device Letters, Vol. 36, Issue 11 https://doi.org/10.1109/LED.2015.2478907	journal	November 2015
Vertical GaN Power Diodes With a Bilayer Edge Termination Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N. IEEE Transactions on Electron Devices, Vol. 63, Issue 1, p. 419-425 https://doi.org/10.1109/TED.2015.2502186	journal	January 2016
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015

Cited By (8)

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Tsao, J. Y.; Chowdhury, S.; Hollis, M. A. Advanced Electronic Materials, Vol. 4, Issue 1 https://doi.org/10.1002/aelm.201600501	journal	December 2017
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review Meneghini, Matteo; Fabris, Elena; Ruzzarin, Maria physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900750	journal	January 2020
The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900762	journal	December 2019
Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy Yamaguchi, Akira; Oozeki, Daisuke; Kawamoto, Naoya physica status solidi (b), Vol. 257, Issue 4 https://doi.org/10.1002/pssb.201900564	journal	April 2020
Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A. Journal of Electronic Materials, Vol. 48, Issue 5 https://doi.org/10.1007/s11664-019-07098-6	journal	March 2019
High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Wang, Jingshan; Cao, Lina; Xie, Jinqiao Applied Physics Letters, Vol. 113, Issue 2 https://doi.org/10.1063/1.5035267	journal	July 2018
Activation of buried p-GaN in MOCVD-regrown vertical structures Li, Wenshen; Nomoto, Kazuki; Lee, Kevin Applied Physics Letters, Vol. 113, Issue 6 https://doi.org/10.1063/1.5041879	journal	August 2018
Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A. Journal of Applied Physics, Vol. 126, Issue 14 https://doi.org/10.1063/1.5110521	journal	October 2019

Similar Records

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Journal Article · Wed May 16 00:00:00 EDT 2018 · IEEE Electron Device Letters · OSTI ID:1289617

Fu, Houqiang; Fu, Kai; Huang, Xuanqi; +5 more

High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches

Journal Article · Fri Jan 11 00:00:00 EST 2019 · IEEE Electron Device Letters · OSTI ID:1289617

Monavarian, M.; Pickrell, G.; Aragon, A. A.; +8 more

Etched-and-Regrown GaN pn -Diodes With 1600 V Blocking Voltage

Journal Article · Fri Jan 01 00:00:00 EST 2021 · IEEE Journal of the Electron Devices Society · OSTI ID:1289617

Armstrong, Andrew M.; Allerman, Andrew A.; Pickrell, Greg W.; +3 more

Related Subjects

42 ENGINEERING
30 DIRECT ENERGY CONVERSION

Title: High voltage and high current density vertical GaN power diodes

Citation Formats

References (10)

Cited By (8)

Similar Records

Related Subjects