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Title: Method of fabricating a back-contact solar cell and device thereof

Patent ·
OSTI ID:1279969
; ;

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
9,406,821
Application Number:
14/314,938
OSTI ID:
1279969
Resource Relation:
Patent File Date: 2014 Jun 25
Country of Publication:
United States
Language:
English

References (13)

Method of fabricating polysilicon emitters for solar cells patent October 1991
Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma patent March 1999
Dual damascene patterned conductor layer formation method without etch stop layer patent September 2001
Mono-silicon solar cells patent January 2013
Extrusion/dispensing systems and methods patent-application May 2007
Back side contact solar cell structures and fabrication processes patent-application July 2007
Solar cell patent-application October 2007
Solar Cell Having Doped Semiconductor Heterojunction Contacts patent-application November 2007
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application February 2008
Solar Cell Fabrication Using Extruded Dopant-Bearing Materials patent-application June 2008
Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application December 2009
Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions patent-application December 2009
Mono-Silicon Solar Cells patent-application February 2010

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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE