Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer

Conference · Thu Sep 16 00:00:00 EDT 1999

OSTI ID:12716

BANDEY, HELEN L; CERNOSEK, RICHARD W; HILLMAN, A R; MARTIN, STEPHEN J

This paper describes a new equivalent-circuit model for the thickness shear mode resonator with a surface viscoelastic layer operating near film resonance. The electrical impedance of the film is represented by a simple three-element parallel circuit containing a resistor, a capacitor, and an inductor. These elements describe the film's viscous power dissipation, elastic energy storage, and kinetic energy storage, respectively. Resonator response comparisons between this lumped-element model and the general transmission-line model show good agreement over a range of film phase conditions and not just near film resonance.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 12716
• Report Number(s): SAND99-0725C; TRN: AH200120%%404
• Resource Relation: Conference: Eurosensors XIII, The Hague (NL), 09/12/1999--09/15/1999; Other Information: PBD: 16 Sep 1999
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
IMPEDANCE
KINETIC ENERGY
RESONATORS
SHEAR
THICKNESS
MATHEMATICAL MODELS
ELASTICITY
VISCOSITY
RESPONSE FUNCTIONS
THICKNESS SHEAR MODE RESONATOR
QCM
VISCOELEASTICITY: EQUIVALENT-CIRCUIT MODEL