High-Resolution Transmission Electron Microscopy Calibration of Critical Dimension (CD) Reference Materials
NIST and Sandia have developed a procedure for producing and calibrating critical dimension (CD), or linewidth, reference materials. These reference materials will be used to calibrate metrology instruments used in semiconductor manufacturing. The artifacts, with widths down to 100 nm, are produced in monocrystalline silicon with all feature edges aligned to specific crystal planes. A two-part calibration of these linewidths is used: the primary calibration, with accuracy to within a few lattice plane thicknesses, is accomplished by counting the lattice planes across the sample as-imaged through use of high-resolution transmission electron microscopy (HRTEM). The secondary calibration is the high-precision electrical CD technique. NIST and Sandia are developing critical dimension (CD), or linewidth, reference materials for use by the semiconductor industry. To meet the current requirements of this rapidly changing industry, the widths of the reference features must be at or below the widths of the finest features in production and/or development. Further, these features must produce consistent results no matter which metrology tool (e.g., scanning electron microscope, scanned probe microscope, electrical metrology) is used to make the measurement. This leads to a requirement for the samples to have planar surfaces, known sidewall angles, and uniform material composition. None of the production techniques in use in semiconductor manufacturing can produce features with all these characteristics. In addition, requirements specified in the National Technology Roadmap for Semiconductors indicate that the width of the feature must be accurately calibrated to approximately 1-2 nm, a value well beyond the current capabilities of the instruments used for semiconductor metrology.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 12683
- Report Number(s):
- SAND99-2418J; TRN: AH200120%%388
- Journal Information:
- Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 21 Sep 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
A Laboratory Scale Critical-Dimension Small-Angle X-ray Scattering Instrument
Characterization of electrical linewidth test structures patterned in (100) Silicon-on-Insulator for use as CD standards