Monolayer semiconductor nanocavity lasers with ultralow thresholds

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

doi:10.1038/nature14290

Title: Monolayer semiconductor nanocavity lasers with ultralow thresholds

Journal Article · Mon Mar 16 00:00:00 EDT 2015 · Nature (London)

DOI:https://doi.org/10.1038/nature14290· OSTI ID:1265430

Wu, Sanfeng ^[1]; Buckley, Sonia ^[2]; Schaibley, John R. ^[1]; Feng, Liefeng ^[3]; Yan, Jiaqiang ^[4]; Mandrus, David G. ^[5]; Hatami, Fariba ^[6]; Yao, Wang ^[7]; Vučković, Jelena ^[2]; Majumdar, Arka ^[8]; Xu, Xiaodong ^[9]

Univ. of Washington, Seattle, WA (United States). Dept. of Physics
Stanford Univ., CA (United States). Ginzton Lab.
Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Tianjin Univ., Tianjin (China). Key Dept. of Applied Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Humboldt Univ. of Berlin (Germany). Dept. of Physics
Univ. of Hong Kong, Hong Kong (China). Dept. of Physics and Center of Theoretical and Computational Physics
Univ. of Washington, Seattle, WA (United States). Dept. of Electrical Engineering
Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Univ. of Washington, Seattle, WA (United States). Dept. of Material Science and Engineering

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter^1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)^6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots⁷, extreme difficulty in current injection8, and lack of compatibility with electronic circuits^7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe₂) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers⁷. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; FA9550-14-1-0277; EFRI-1433496; ECS-9731293; N00014-08-1-0561; FP7-ICT-2013-613024-GRASP

OSTI ID:: 1265430

Journal Information:: Nature (London), Vol. 520, Issue 7545; ISSN 0028-0836

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 603 works

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