Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

Neumayer, Sabine M.; Strelcov, Evgheni; Manzo, Michele; Gallo, Katia; Kravchenko, Ivan I.; Kholkin, Andrei L.; Kalinin, Sergei V.; Rodriguez, Brian J.

doi:10.1063/1.4938386

Title: Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4938386· OSTI ID:1261495

Neumayer, Sabine M. ^[1]; Strelcov, Evgheni ^[2]; Manzo, Michele ^[3]; Gallo, Katia ^[3]; Kravchenko, Ivan I. ^[2];

^[4];

^[2];

^[1]

Univ. College of Dublin (Ireland)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
KTH Royal Inst. of Technology, Stockholm (Sweden)
Ural Federal Univ., Ekaterinburg (Russia)

Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarization as well as atmospheric conditions. Additionally, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. In polarization dependent current flow, attributed to charged domain walls and band bending, it the rectifying ability of Mg: LN in combination with suitable metal electrodes that allow for further tailoring of conductivity is demonstrated.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); European Commission (EC); Science Foundation of Ireland; Swedish Research Council (SRC)

Grant/Contract Number:: AC05-00OR22725; 290158; SFI07/IN1/B931; CNMS2015-139; 622-2010-526; 621-2014-5407; FCT UIDCTM/50011/2013

OSTI ID:: 1261495

Alternate ID(s):: OSTI ID: 1234029

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 24; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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