Synthesis of millimeter-scale transition metal dichalcogenides single crystals

Gong, Yongji; Ye, Gonglan; Lei, Sidong; Shi, Gang; Vajtai, Robert; Pantelides, Sokrates T.; Zhou, Wu; Li, Bo; Ajayan, Pullikel M.

doi:10.1002/adfm.201504633

Title: Synthesis of millimeter-scale transition metal dichalcogenides single crystals

Journal Article · Wed Feb 10 00:00:00 EST 2016 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201504633· OSTI ID:1261342

Gong, Yongji ^[1]; Ye, Gonglan ^[1]; Lei, Sidong ^[1]; Shi, Gang ^[1]; Vajtai, Robert ^[1]; Pantelides, Sokrates T. ^[2]; Zhou, Wu ^[3]; Li, Bo ^[1]; Ajayan, Pullikel M. ^[1]

Rice Univ., Houston, TX (United States)
Vanderbilt Univ., Nashville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe2 layers is reported, in which the nucleation density can be reduced from 105 to 25 nuclei cm^-2, leading to millimeter-scale MoSe₂ single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe2 films with well-defined stacking orientation can also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm² V^-1 s^-1, for back-gated MoSe₂ transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter-scale WSe₂ single crystals.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1261342

Alternate ID(s):: OSTI ID: 1597769

Journal Information:: Advanced Functional Materials, Vol. 26, Issue 12; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 130 works

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