Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

doi:10.1002/adfm.201505274

Title: Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

Journal Article · Tue Feb 09 00:00:00 EST 2016 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201505274· OSTI ID:1261299

Pudasaini, Pushpa Raj ^[1]; Noh, Joo Hyon ^[1]; Wong, Anthony T. ^[1]; Ovchinnikova, Olga S. ^[2]; Haglund, Amanda V. ^[1]; Dai, Sheng ^[3]; Ward, Thomas Zac ^[4]; Mandrus, David ^[5]; Rack, Philip D. ^[6]

Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences and the Inst. for Functional Imaging of Materials
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation

Grant/Contract Number:: AC05-00OR22725; SC0002136; GBMF4416

OSTI ID:: 1261299

Journal Information:: Advanced Functional Materials, Vol. 26, Issue 17; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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References (44)

Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors Chung, Yoon Jang; Kim, Un Ki; Hwang, Eun Suk Applied Physics Letters, Vol. 105, Issue 1 https://doi.org/10.1063/1.4889856	journal	July 2014
Printable and flexible electronics: from TFTs to bioelectronic devices Magliulo, M.; Mulla, M. Y.; Singh, M. Journal of Materials Chemistry C, Vol. 3, Issue 48 https://doi.org/10.1039/C5TC02737C	journal	January 2015
Ionic Liquids for Electrolyte-Gating of ZnO Field-Effect Transistors Thiemann, S.; Sachnov, S.; Porscha, S. The Journal of Physical Chemistry C, Vol. 116, Issue 25 https://doi.org/10.1021/jp3024233	journal	June 2012
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro Nature, Vol. 432, Issue 7016, p. 488-492 https://doi.org/10.1038/nature03090	journal	November 2004
Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation Jeong, J.; Aetukuri, N.; Graf, T. Science, Vol. 339, Issue 6126 https://doi.org/10.1126/science.1230512	journal	March 2013
A high-mobility electronic system at an electrolyte-gated oxide surface Gallagher, Patrick; Lee, Menyoung; Petach, Trevor A. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7437	journal	March 2015
Investigating the stability of zinc oxide thin film transistors Cross, R. B. M.; De Souza, M. M. Applied Physics Letters, Vol. 89, Issue 26 https://doi.org/10.1063/1.2425020	journal	December 2006
A correlated nickelate synaptic transistor Shi, Jian; Ha, Sieu D.; Zhou, You Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3676	journal	October 2013
Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis Faber, Hendrik; Lin, Yen-Hung; Thomas, Stuart R. ACS Applied Materials & Interfaces, Vol. 7, Issue 1 https://doi.org/10.1021/am5072139	journal	December 2014
High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air Adamopoulos, George; Thomas, Stuart; Wöbkenberg, Paul H. Advanced Materials, Vol. 23, Issue 16 https://doi.org/10.1002/adma.201003935	journal	March 2011
Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films Kim, Yong-Hoon; Heo, Jae-Sang; Kim, Tae-Hyeong Nature, Vol. 489, Issue 7414 https://doi.org/10.1038/nature11434	journal	September 2012
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process Banger, K. K.; Yamashita, Y.; Mori, K. Nature Materials, Vol. 10, Issue 1, p. 45-50 https://doi.org/10.1038/nmat2914	journal	December 2010
High mobility indium free amorphous oxide thin film transistors Fortunato, Elvira M. C.; Pereira, Luís M. N.; Barquinha, Pedro M. C. Applied Physics Letters, Vol. 92, Issue 22 https://doi.org/10.1063/1.2937473	journal	June 2008
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances Fortunato, E.; Barquinha, P.; Martins, R. Advanced Materials, Vol. 24, Issue 22 https://doi.org/10.1002/adma.201103228	journal	May 2012
Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO ₃ (001) by Oxygen Li, Mingyang; Han, Wei; Jiang, Xin Nano Letters, Vol. 13, Issue 10 https://doi.org/10.1021/nl402088f	journal	September 2013
Wafer-scale design of lightweight and transparent electronics that wraps around hairs Salvatore, Giovanni A.; Münzenrieder, Niko; Kinkeldei, Thomas Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms3982	journal	January 2014
In-Depth Studies on Rapid Photochemical Activation of Various Sol-Gel Metal Oxide Films for Flexible Transparent Electronics Park, Sungjun; Kim, Kwang-Ho; Jo, Jeong-Wan Advanced Functional Materials, Vol. 25, Issue 19 https://doi.org/10.1002/adfm.201500545	journal	March 2015
Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications Socratous, Josephine; Banger, Kulbinder K.; Vaynzof, Yana Advanced Functional Materials, Vol. 25, Issue 12 https://doi.org/10.1002/adfm.201404375	journal	February 2015
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors Jeong, Jae Kyeong; Won Yang, Hui; Jeong, Jong Han Applied Physics Letters, Vol. 93, Issue 12 https://doi.org/10.1063/1.2990657	journal	September 2008
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing Kim, Myung-Gil; Kanatzidis, Mercouri G.; Facchetti, Antonio Nature Materials, Vol. 10, Issue 5, p. 382-388 https://doi.org/10.1038/nmat3011	journal	April 2011
Fully Flexible Solution-Deposited ZnO Thin-Film Transistors Song, Keunkyu; Noh, Junghun; Jun, Taehwan Advanced Materials, Vol. 22, Issue 38 https://doi.org/10.1002/adma.201002163	journal	August 2010
Monolithic Metal Oxide Transistors Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung ACS Nano, Vol. 9, Issue 4 https://doi.org/10.1021/acsnano.5b00700	journal	February 2015
High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep18168	journal	December 2015
Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic Hong, Kihyon; Kim, Se Hyun; Lee, Keun Hyung Advanced Materials, Vol. 25, Issue 25 https://doi.org/10.1002/adma.201300211	journal	March 2013
Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors Yu, Xinge; Smith, Jeremy; Zhou, Nanjia Proceedings of the National Academy of Sciences, Vol. 112, Issue 11 https://doi.org/10.1073/pnas.1501548112	journal	March 2015
Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors Chen, Wei-Tsung; Lo, Shih-Yi; Kao, Shih-Chin IEEE Electron Device Letters, Vol. 32, Issue 11 https://doi.org/10.1109/LED.2011.2165694	journal	November 2011
Semiconducting metal oxide sensor array for the selective detection of combustion gases Tomchenko, Alexey A.; Harmer, Gregory P.; Marquis, Brent T. Sensors and Actuators B: Chemical, Vol. 93, Issue 1-3 https://doi.org/10.1016/S0925-4005(03)00240-5	journal	August 2003
High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere Bashir, Aneeqa; Wöbkenberg, Paul H.; Smith, Jeremy Advanced Materials, Vol. 21, Issue 21 https://doi.org/10.1002/adma.200803584	journal	June 2009
Collective bulk carrier delocalization driven by electrostatic surface charge accumulation Nakano, M.; Shibuya, K.; Okuyama, D. Nature, Vol. 487, Issue 7408 https://doi.org/10.1038/nature11296	journal	July 2012
Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei Advanced Materials, Vol. 24, Issue 26 https://doi.org/10.1002/adma.201200683	journal	June 2012
Flexography-Printed In ₂ O ₃ Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate Leppäniemi, Jaakko; Huttunen, Olli-Heikki; Majumdar, Himadri Advanced Materials, Vol. 27, Issue 44 https://doi.org/10.1002/adma.201502569	journal	October 2015
Discovery of superconductivity in KTaO3 by electrostatic carrier doping Ueno, K.; Nakamura, S.; Shimotani, H. Nature Nanotechnology, Vol. 6, Issue 7 https://doi.org/10.1038/nnano.2011.78	journal	May 2011
Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors Han, Seung-Yeol; Herman, Gregory S.; Chang, Chih-hung Journal of the American Chemical Society, Vol. 133, Issue 14 https://doi.org/10.1021/ja104864j	journal	April 2011
Amorphous oxide TFT and their applications in electrophoretic displays Ito, Manabu; Kon, Masato; Miyazaki, Chihiro physica status solidi (a), Vol. 205, Issue 8 https://doi.org/10.1002/pssa.200778910	journal	August 2008
High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C Lin, Yen-Hung; Faber, Hendrik; Zhao, Kui Advanced Materials, Vol. 25, Issue 31 https://doi.org/10.1002/adma.201301622	journal	June 2013
Material characteristics and applications of transparent amorphous oxide semiconductors Kamiya, Toshio; Hosono, Hideo NPG Asia Materials, Vol. 2, Issue 1 https://doi.org/10.1038/asiamat.2010.5	journal	January 2010
Electric-field-induced superconductivity in an insulator Ueno, K.; Nakamura, S.; Shimotani, H. Nature Materials, Vol. 7, Issue 11, p. 855-858 https://doi.org/10.1038/nmat2298	journal	October 2008
Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties Kwon, Seyeoul; Noh, Joo Hyon; Noh, Jiyong Journal of The Electrochemical Society, Vol. 158, Issue 3 https://doi.org/10.1149/1.3530779	journal	January 2011
Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors Liu, Guoxia; Liu, Ao; Zhu, Huihui Advanced Functional Materials, Vol. 25, Issue 17 https://doi.org/10.1002/adfm.201500056	journal	March 2015
All-Solution-Processed Transparent Thin Film Transistor and Its Application to Liquid Crystals Driving Lee, Kwang-Ho; Kim, Sang-Mook; Jeong, Huisu Advanced Materials, Vol. 25, Issue 23 https://doi.org/10.1002/adma.201300084	journal	April 2013
Ionic Liquid versus SiO ₂ Gated a-IGZO Thin Film Transistors: A Direct Comparison Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony ECS Journal of Solid State Science and Technology, Vol. 4, Issue 9 https://doi.org/10.1149/2.0141509jss	journal	January 2015
Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics Park, Sungjun; Lee, SeYeong; Kim, Chang-Hyun Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep13088	journal	August 2015
Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress Chen, Fa-Hsyang; Pan, Tung-Ming; Chen, Ching-Hung IEEE Electron Device Letters, Vol. 34, Issue 5 https://doi.org/10.1109/LED.2013.2248115	journal	May 2013
High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids Yuan, Hongtao; Shimotani, Hidekazu; Tsukazaki, Atsushi Advanced Functional Materials, Vol. 19, Issue 7 https://doi.org/10.1002/adfm.200801633	journal	April 2009

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Title: Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

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