MoS2 Heterojunctions by Thickness Modulation

Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

doi:10.1038/srep10990

Title: MoS₂ Heterojunctions by Thickness Modulation

Journal Article · Tue Jun 30 00:00:00 EDT 2015 · Scientific Reports

DOI:https://doi.org/10.1038/srep10990· OSTI ID:1256052

Tosun, Mahmut ^[1]; Fu, Deyi ^[2]; Desai, Sujay B. ^[1]; Ko, Changhyun ^[3]; Seuk Kang, Jeong ^[1]; Lien, Der-Hsien ^[1]; Najmzadeh, Mohammad ^[3]; Tongay, Sefaattin ^[3]; Wu, Junqiao ^[4]; Javey, Ali ^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)

In this work, we report lateral heterojunction formation in as-exfoliated MoS₂ flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS₂ junctions with important implications for exploring novel optoelectronic devices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1256052

Journal Information:: Scientific Reports, Vol. 5; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 82 works

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