Parallel stitching of 2D materials

Ling, Xi; Wu, Lijun; Lin, Yuxuan; Ma, Qiong; Wang, Ziqiang; Song, Yi; Yu, Lili; Huang, Shengxi; Fang, Wenjing; Zhang, Xu; Hsu, Allen L.; Bie, Yaqing; Lee, Yi -Hsien; Zhu, Yimei; Li, Ju; Jarillo-Herrero, Pablo; Dresselhaus, Mildred; Palacios, Tomas; Kong, Jing

doi:10.1002/adma.201505070

Title: Parallel stitching of 2D materials

Journal Article · Wed Jan 27 00:00:00 EST 2016 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201505070· OSTI ID:1255728

Ling, Xi ^[1]; Wu, Lijun ^[2]; Lin, Yuxuan ^[1]; Ma, Qiong ^[1]; Wang, Ziqiang ^[1]; Song, Yi ^[1]; Yu, Lili ^[1]; Huang, Shengxi ^[1]; Fang, Wenjing ^[1]; Zhang, Xu ^[1]; Hsu, Allen L. ^[1]; Bie, Yaqing ^[1]; Lee, Yi -Hsien ^[3]; Zhu, Yimei ^[2]; Li, Ju ^[1]; Jarillo-Herrero, Pablo ^[1]; Dresselhaus, Mildred ^[1]; Palacios, Tomas ^[1]; Kong, Jing ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
National Tsing-Hua Univ., Hsinchu (Taiwan)

Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. Lastly, the methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1255728

Report Number(s):: BNL-112246-2016-JA; R&D Project: MA015MACA; KC0201010

Journal Information:: Advanced Materials, Vol. 28, Issue 12; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 175 works

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References (32)

Flexible Electronics: The Next Ubiquitous Platform Nathan, A.; Ahnood, A.; Cole, M. T. Proceedings of the IEEE, Vol. 100, Issue Special Centennial Issue https://doi.org/10.1109/JPROC.2012.2190168	journal	May 2012
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit Nature Nanotechnology, Vol. 8, Issue 11 https://doi.org/10.1038/nnano.2013.206	journal	October 2013
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters Yu, Woo Jong; Li, Zheng; Zhou, Hailong Nature Materials, Vol. 12, Issue 3 https://doi.org/10.1038/nmat3518	journal	December 2012
Boron nitride substrates for high-quality graphene electronics Dean, C. R.; Young, A. F.; Meric, I. Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726 https://doi.org/10.1038/nnano.2010.172	journal	August 2010
In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes Liu, Zheng; Ma, Lulu; Shi, Gang Nature Nanotechnology, Vol. 8, Issue 2 https://doi.org/10.1038/nnano.2012.256	journal	January 2013
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials Yu, Woo Jong; Liu, Yuan; Zhou, Hailong Nature Nanotechnology, Vol. 8, Issue 12 https://doi.org/10.1038/nnano.2013.219	journal	October 2013
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films Britnell, L.; Ribeiro, R. M.; Eckmann, A. Science, Vol. 340, Issue 6138 https://doi.org/10.1126/science.1235547	journal	May 2013
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface Li, M. -Y.; Shi, Y.; Cheng, C. -C. Science, Vol. 349, Issue 6247 https://doi.org/10.1126/science.aab4097	journal	July 2015
Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges Liu, L.; Park, J.; Siegel, D. A. Science, Vol. 343, Issue 6167 https://doi.org/10.1126/science.1246137	journal	January 2014
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions Duan, Xidong; Wang, Chen; Shaw, Jonathan C. Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030 https://doi.org/10.1038/nnano.2014.222	journal	September 2014
Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M. Nature Materials, Vol. 13, Issue 12, p. 1096-1101 https://doi.org/10.1038/nmat4064	journal	August 2014
Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers Gong, Yongji; Lin, Junhao; Wang, Xingli Nature Materials, Vol. 13, Issue 12, p. 1135-1142 https://doi.org/10.1038/nmat4091	journal	September 2014
Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers Zhang, Xin-Quan; Lin, Chin-Hao; Tseng, Yu-Wen Nano Letters, Vol. 15, Issue 1 https://doi.org/10.1021/nl503744f	journal	December 2014
Role of the Seeding Promoter in MoS ₂ Growth by Chemical Vapor Deposition Ling, Xi; Lee, Yi-Hsien; Lin, Yuxuan Nano Letters, Vol. 14, Issue 2 https://doi.org/10.1021/nl4033704	journal	January 2014
Wettability and Surface Free Energy of Graphene Films Wang, Shiren; Zhang, Yue; Abidi, Noureddine Langmuir, Vol. 25, Issue 18 https://doi.org/10.1021/la901402f	journal	September 2009
Wetting of Mono and Few-Layered WS ₂ and MoS ₂ Films Supported on Si/SiO ₂ Substrates Chow, Philippe K.; Singh, Eklavya; Viana, Bartolomeu Cruz ACS Nano, Vol. 9, Issue 3 https://doi.org/10.1021/nn5072073	journal	February 2015
Line Defects in Molybdenum Disulfide Layers Enyashin, Andrey N.; Bar-Sadan, Maya; Houben, Lothar The Journal of Physical Chemistry C, Vol. 117, Issue 20 https://doi.org/10.1021/jp403976d	journal	May 2013
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A. Nature Materials, Vol. 12, Issue 6, p. 554-561 https://doi.org/10.1038/nmat3633	journal	May 2013
Physics of Semiconductor Devices Sze, S. M.; Ng, Kwok K. https://doi.org/10.1002/0470068329	book	January 2007
Electrical Characteristics of Multilayer MoS ₂ FET’s with MoS ₂ /Graphene Heterojunction Contacts Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl5015316	journal	July 2014
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Britnell, L.; Gorbachev, R. V.; Jalil, R. Science, Vol. 335, Issue 6071 https://doi.org/10.1126/science.1218461	journal	February 2012
Graphene/MoS ₂ Hybrid Technology for Large-Scale Two-Dimensional Electronics Yu, Lili; Lee, Yi-Hsien; Ling, Xi Nano Letters, Vol. 14, Issue 6 https://doi.org/10.1021/nl404795z	journal	May 2014
Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna Nano Letters, Vol. 14, Issue 12 https://doi.org/10.1021/nl503144a	journal	November 2014
One-Dimensional Electrical Contact to a Two-Dimensional Material Wang, L.; Meric, I.; Huang, P. Y. Science, Vol. 342, Issue 6158 https://doi.org/10.1126/science.1244358	journal	October 2013
Integrated Circuits Based on Bilayer MoS₂ Transistors Wang, Han; Yu, Lili; Lee, Yi-Hsien Nano Letters, Vol. 12, Issue 9, p. 4674-4680 https://doi.org/10.1021/nl302015v	journal	January 2012
Physics of Semiconductor Devices Shur, Michael; Singh, Jasprit Physics Today, Vol. 43, Issue 10 https://doi.org/10.1063/1.2810727	journal	October 1990
Isospin Pomeranchuk effect in twisted bilayer graphene Saito, Yu; Yang, Fangyuan; Ge, Jingyuan Nature, Vol. 592, Issue 7853 https://doi.org/10.1038/s41586-021-03409-2	journal	April 2021
Flexible electronics: The next ubiquitous platform Nathan, Arokia; Ahnood, A.; Cole, Matthew Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.74110	text	January 2012
Physics of Semiconductor Devices Sze, S. M.; Mattis, Daniel C. Physics Today, Vol. 23, Issue 6 https://doi.org/10.1063/1.3022205	journal	June 1970
Physics of Semiconductor Devices Rudan, Massimo Zenodo https://doi.org/10.5281/zenodo.4455003	book	January 2015
Line Defects in Molybdenum Disulfide Layers Enyashin, Andrey N.; Bar-Sadan, Maya; Houben, Lothar arXiv https://doi.org/10.48550/arxiv.1304.3701	text	January 2013

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