Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2
Abstract
A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. We investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achievingmore »
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Rutgers Univ., Piscataway, NJ (United States)
- Rice Univ., Houston, TX (United States)
- Pacific Light Technologies, Portland, OR (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1254836
- Report Number(s):
- LA-UR-14-29662
Journal ID: ISSN 1936-0851
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science
Citation Formats
Yamaguchi, Hisato, Blancon, Jean-Christophe, Kappera, Rajesh, Lei, Sidong, Najmaei, Sina, Mangum, Benjamin D., Gupta, Gautam, Ajayan, Pulickel M., Lou, Jun, Chhowalla, Manish, Crochet, Jared J., and Mohite, Aditya D. Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2. United States: N. p., 2014.
Web. doi:10.1021/nn506469v.
Yamaguchi, Hisato, Blancon, Jean-Christophe, Kappera, Rajesh, Lei, Sidong, Najmaei, Sina, Mangum, Benjamin D., Gupta, Gautam, Ajayan, Pulickel M., Lou, Jun, Chhowalla, Manish, Crochet, Jared J., & Mohite, Aditya D. Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2. United States. https://doi.org/10.1021/nn506469v
Yamaguchi, Hisato, Blancon, Jean-Christophe, Kappera, Rajesh, Lei, Sidong, Najmaei, Sina, Mangum, Benjamin D., Gupta, Gautam, Ajayan, Pulickel M., Lou, Jun, Chhowalla, Manish, Crochet, Jared J., and Mohite, Aditya D. 2014.
"Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2". United States. https://doi.org/10.1021/nn506469v. https://www.osti.gov/servlets/purl/1254836.
@article{osti_1254836,
title = {Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2},
author = {Yamaguchi, Hisato and Blancon, Jean-Christophe and Kappera, Rajesh and Lei, Sidong and Najmaei, Sina and Mangum, Benjamin D. and Gupta, Gautam and Ajayan, Pulickel M. and Lou, Jun and Chhowalla, Manish and Crochet, Jared J. and Mohite, Aditya D.},
abstractNote = {A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. We investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.},
doi = {10.1021/nn506469v},
url = {https://www.osti.gov/biblio/1254836},
journal = {ACS Nano},
issn = {1936-0851},
number = 1,
volume = 9,
place = {United States},
year = {Thu Dec 18 00:00:00 EST 2014},
month = {Thu Dec 18 00:00:00 EST 2014}
}
Web of Science
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